1. product profile 1.1 general description 140 w ldmos power transistor for base st ation applications at frequencies from 2500 mhz to 2700 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2500 mhz to 2700 mhz frequency range BLF8G27LS-140 power ldmos transistor rev. 2 ? 5 june 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2600 to 2700 1300 32 45 17.4 32 ? 30 [1] 2-carrier w-cdma 2600 to 2700 1300 28 35 17.0 29 ? 31 [1]
BLF8G27LS-140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 5 june 2013 2 of 14 nxp semiconductors BLF8G27LS-140 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF8G27LS-140 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.27 k/w
BLF8G27LS-140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 5 june 2013 3 of 14 nxp semiconductors BLF8G27LS-140 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G27LS-140 is capable to withsta nd a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq = 1300 ma; p l = 180 w (cw); f = 2620 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40-a i gss gate leakage current v gs =11v; v ds =0v - - 450 na g fs forward transconductance v ds =10v; i d = 10.8 a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 2622.5 mhz; f 2 = 2627.5 mhz; f 3 = 2682.5 mhz; f 4 = 2687.5 mhz; rf performance at v ds = 32 v; i dq = 1300 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 45 w 15.8 17.4 - db rl in input return loss p l(av) = 45 w - ? 18 ? 8db ? d drain efficiency p l(av) = 45 w 27 32 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) = 45 w - ? 30 ? 27 dbc table 8. typical impedance i dq = 1300 ma; v ds = 32 v. f z s [1] z l [1] (mhz) (? ) (? ) 2600 2.30 ? j4.90 1.40 ? j3.10 2700 3.80 ? j4.50 1.40 ? j3.10
BLF8G27LS-140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 5 june 2013 4 of 14 nxp semiconductors BLF8G27LS-140 power ldmos transistor 7.3 test circuit fig 1. definition of transistor impedance 001aaf059 drain z l z s gate printed-circuit board (pcb): taconic rf35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout for class-ab production test circuit d d d & |